? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gsm transient 30 v i d25 t c = 25 c 200 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 500 a i a t c = 25 c40 a e as t c = 25 c 1.5 j p d t c = 25 c 550 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight to-247 6.0 g to-3p 5.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 50a , notes 1, 2 4.5 5.5 m trenchmv tm power mosfet n-channel enhancement mode avalanche rated ixth200 n10t ixtq200 n10t v dss = 100v i d25 = 200a r ds(on) 5.5m ds99654a(10/08) g = gate d = drain s = source tab = drain features international standard packages 175c operating temperature avalanche rated low r ds(on) advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary - side switch high current switching applications to-3p (ixtq) to-247 (ixth) s (tab) (tab) g d s g d
ixys reserves the right to change limits, test conditions, and dimensions. ixth200n10t IXTQ200N10T symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a , note 1 60 96 s c iss 9400 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1087 pf c rss 140 pf t d(on) 35 ns t r 31 ns t d(off) 45 ns t f 34 ns q g(on) 152 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 50a 47 nc q gd 47 nc r thjc 0.27 c/w r thch 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 200 a i sm repetitive, pulse width limited by t jm 500 a v sd i f = 50a, v gs = 0v, note 1 1.0 v t rr 76 ns q rm 205 nc i rm 5.4 a notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 50a r g = 3.3 (external) i f = 100a, v gs = 0v,-di/dt = 100a/ s v r = 50v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain
? 2008 ixys corporation, all rights reserved ixth200n10t IXTQ200N10T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0123456 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ds - volts i d - amperes 5v 6v 7v v gs = 10v 9v 8v fig. 4. r ds(on) normalized to i d = 100a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 200a i d = 100a fig. 5. r ds(on) normalized to i d = 100a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current l imit
ixys reserves the right to change limits, test conditions, and dimensions. ixth200n10t IXTQ200N10T ixys ref: t_200n10t(6v)9-30-08-d fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 250 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 200 225 250 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 50v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixys ref: t_200n10t(6v)9-30-08-d ixth200n10t IXTQ200N10T fig. 14. resistive turn-on rise time vs. drain current 22 23 24 25 26 27 28 29 30 31 32 33 34 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t r - nanoseconds r g = 3.3 ? v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 220 2 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 30 35 40 45 50 55 60 65 70 75 80 85 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 28 30 32 34 36 38 40 42 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 45 50 55 60 65 70 75 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 50v i d = 25a i d = 50a fig. 17. resistive turn-off switching times vs. drain current 30 31 32 33 34 35 36 37 38 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t f - nanoseconds 40 45 50 55 60 65 70 75 80 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 50v t j = 125oc t j = 25oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 22 23 24 25 26 27 28 29 30 31 32 33 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 ? v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 2468101214161820 r g - ohms t f - nanoseconds 50 75 100 125 150 175 200 225 250 275 300 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 50a i d = 25a
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